Transparent thin film metrology for 45/65nm process nodes and above
Utilizing multi-angle, multi-wavelength Focused Beam Ellipsometry (FBE) for best in class stability and repeatability, the S2000 metrology system allows measurement of thin films on wafers from 100mm-200mm. Ideal for fabwide metrology in Diff, litho, etch, CVD, pre/post CMP processes for RF/MEMS.
- 633nm 50x50 measurement site optics
- Class 2 mini-environment with integral ULPA filtering to reduce particulates
- Windows 7 OS running Rudolph Metrology Studio
- Vanguard™ II small wafer station with dual 25 slot open cassette load stations
- Option - 784nm and 923nm FBE laser
- Option – Fast DUV-R for Diff application (reflectivity down to 190nm) and basic composition.
- Option – Vis-R for fast measurements on small measurement sites (15x15µm)
- Option – Cognex PatMax® pattern recognition