Delivers superior performance on Cu films that are critical in advanced device technologies and new TSV processes
Opaque Film Metrology
With PULSE™ Technology, an ultrafast flash of laser light generates a sound wave that passes through an opaque film stack. When the sound wave encounters a film interface, an echo returns to the surface. The time between sound induction and echo detection provides a direct measurement of film thickness. With its ability to rapidly measure thickness, density, and other film parameters of multilayer stacks non-destructively and without interference from underlying layers or levels, PULSE is ideal for on-product process control measurements.
Transparent Film Metrology
Rudolph's Focused Beam Ellipsometry (FBE) metrology systems use multiple lasers that operate simultaneously at multiple angles of incidence and wavelengths to provide powerful measurement and analysis capabilities for today's advanced processes and tomorrow's new materials. Lasers make the systems inherently stable, increasing measurement speed and accuracy while allowing for a reduction in maintenance costs. Rudolph's systems also offer visible and deep ultra-violet reflectometry that allows the characterization of single layer films and multilayer film stacks beyond the capabilities of conventional ellipsometry or reflectometry alone. In addition to film thickness, the S3000 platform supports optional film stress and wafer bow capabilities critical to managing the deposition process and determining a films mechanical and electrical integrity. The latest generation system, the S3000SX, is designed to deliver measurement capability in site sizes down to 35 microns and the highest accuracy, superior repeatability and matching, and high throughput for monitoring wafer production at the 20 and 14nm nodes.
Rudolph's FBE metrology systems offer solutions for many critical applications in semiconductor manufacturing including:
- Ultrathin Gates
- Oxides, Nitrides
- Single and multilayer dielectrics
- Thin metals (<100Å)
- Hardmask layers
- Thick Films
- Etch rate and CMP monitoring
- Film stress and wafer bow
- Bulk Si, SOI, FDSOI
Single wavelength ellipsometry and whole wafer MAControl for advanced gate metrology
Offers simultaneous FBE and DUVR measurement in advanced diffusion and fabwide thin film applications
Advanced transparent film metrology for the 28nm process node and below
Transparent thin film metrology for 100, 150 and 200mm wafers.